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 SM ISO690:2012YOVU, M., ANDRIESH, Andrei, SHUTOV, Serghei, BULGARU, M., POPESCU, Mihai A., SAVA, Florinel, LORINCZI, Adam. Electrical and photoelectrical properties of glassy As2Se3 doped with Mn, Dy and Sm. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 1, pp. 313-316. DOI: https://doi.org/10.1109/SMICND.1996.557392 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557392 | ||||||
| Pag. 313-316 | ||||||
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The chalcogenide glassy semiconductor As2Se3 doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase. |
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| Cuvinte-cheie Arsenic compounds, Crystal impurities, crystal structure, Dysprosium, Electric conductivity, Electric properties, manganese, photoconductivity, Photoelectricity, Samarium, Semiconductor doping, X ray crystallography |
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