Photovaricaps on ZnIn2S4 and CdGaInS4
Close
Articolul precedent
Articolul urmator
171 0
SM ISO690:2012
RADAUTSANU, Sergiu, ARAMĂ, Efim, ZHITAR, V., MOLDOVYAN, Nikolay. Photovaricaps on ZnIn2S4 and CdGaInS4. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 20, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1997, Vol. 1, pp. 267-270. DOI: https://doi.org/10.1109/SMICND.1997.651595
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Proceedings of the International Semiconductor Conference
Vol. 1, 1997
Conferința "International Semiconductor Conference"
20, Sinaia, Romania, 7-11 octombrie 1997

Photovaricaps on ZnIn2S4 and CdGaInS4

DOI:https://doi.org/10.1109/SMICND.1997.651595

Pag. 267-270

Radautsanu Sergiu, Aramă Efim, Zhitar V., Moldovyan Nikolay
 
Academy of Sciences of Moldova
 
 
Disponibil în IBN: 6 decembrie 2023


Rezumat

The paper presents the results of investigation of photovaricaps based on Pt - ZnIn2S4 (CdGaInS4) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (103 Hz) photovaricaps having the super position coefficient of capacity (4 - 20) and the Quality factor (10 - 60) have been defined.

Cuvinte-cheie
Absorption spectroscopy, Crystal impurities, Semiconducting cadmium compounds, Semiconducting zinc compounds

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Rădăuţanu, S.I.</dc:creator>
<dc:creator>Aramă, E.D.</dc:creator>
<dc:creator>Jitari, V.F.</dc:creator>
<dc:creator>Moldovyan, N.A.</dc:creator>
<dc:date>1997</dc:date>
<dc:description xml:lang='en'><p>The paper presents the results of investigation of photovaricaps based on Pt - ZnIn<sub>2</sub>S<sub>4</sub>&nbsp;(CdGaInS<sub>4</sub>) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (10<sup>3</sup>&nbsp;Hz) photovaricaps having the super position coefficient of capacity (4 - 20) and the Quality factor (10 - 60) have been defined.</p></dc:description>
<dc:identifier>10.1109/SMICND.1997</dc:identifier>
<dc:source>Proceedings of the International Semiconductor Conference (Vol. 1) 267-270</dc:source>
<dc:subject>Absorption spectroscopy</dc:subject>
<dc:subject>Crystal impurities</dc:subject>
<dc:subject>Semiconducting cadmium compounds</dc:subject>
<dc:subject>Semiconducting zinc compounds</dc:subject>
<dc:title>Photovaricaps on ZnIn2S4 and CdGaInS4</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>