Amplification and lasing at M-band of luminescence

Khadzhi Peter; Beloussov Igor; Rosanov Nikolay; Fedorov Sergey; Markov D.; Corovai Alexandru

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KHADZHI, Peter, BELOUSSOV, Igor, ROSANOV, Nikolay, FEDOROV, Sergey, MARKOV, D., COROVAI, Alexandru. Amplification and lasing at M-band of luminescence. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 1, 23-26 august 2010, Kazan. Bellingham, Washington: SPIE, 2011, Vol.7994, pp. 1-7. ISBN 9780819485670 . ISSN 0277786X. DOI: https://doi.org/10.1117/12.881507

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Proceedings of SPIE - The International Society for Optical Engineering
Vol.7994, 2011

Conferința "Lasers, Applications, and Technologies"
1, Kazan, Rusia, 23-26 august 2010

Amplification and lasing at M-band of luminescence

DOI:https://doi.org/10.1117/12.881507

Pag. 1-7

Khadzhi Peter¹²³, Beloussov Igor¹²³, Rosanov Nikolay¹²³, Fedorov Sergey¹²³, Markov D.¹²³, Corovai Alexandru¹²³

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Vavilov State Optical Institute,
³ T.G. Shevchenko State University of Pridnestrovie, Tiraspol

Disponibil în IBN: 29 noiembrie 2023

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A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation. Estimations for CuCl give the values of lasing photons with the energy about 3,2 eV and the maximum small signal gain about the value of the exciton absorption coefficient.

Cuvinte-cheie
biexciton, exciton, Laser generation

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