Transport properties of n-ZrNiSn single crystals

Arushanov Ernest; Kaefer W.; Fess K.; Kloc Christian L.; Friemelt K.; Bucher Ernst

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ARUSHANOV, Ernest, KAEFER, W., FESS, K., KLOC, Christian L., FRIEMELT, K., BUCHER, Ernst. Transport properties of n-ZrNiSn single crystals. In: Physica Status Solidi (A) Applied Research, 2000, vol. 177, pp. 511-520. ISSN 0031-8965. DOI: https://doi.org/10.1002/(SICI)1521-396X(200002)177:2<511::AID-PSSA511>3.0.CO;2-A

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Physica Status Solidi (A) Applied Research

Volumul 177 / 2000 / ISSN 0031-8965 /ISSNe 1521-396X

Transport properties of n-ZrNiSn single crystals

DOI:https://doi.org/10.1002/(SICI)1521-396X(200002)177:2<511::AID-PSSA511>3.0.CO;2-A

Pag. 511-520

Arushanov Ernest¹, Kaefer W.², Fess K.², Kloc Christian L.², Friemelt K.², Bucher Ernst²

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² University of Konstanz

Disponibil în IBN: 22 noiembrie 2023

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Electrical measurements have been carried out on n-type ZrNiSn single crystals. The observed temperature dependence of the Hall coefficient is explained in assuming the existence of an impurity band. The values of the activation energy of the shallow donors, their concentration and the concentration of the compensating acceptors were calculated. It is shown that the scattering due to acoustic phonons and ionized impurities is most important in the high and low temperature region, respectively. The value of the conduction band deformation potential is estimated.

Cuvinte-cheie
activation energy, Computational methods, Crystal impurities, Electric variables measurement, Electron transport properties, Hall effect, ionization, phonons, single crystals, Thermal effects

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