Hole mobility in p-type &beta;-FeSi2 single crystals

Arushanov Ernest; Lange Horst; Werner Johannes

Conţinutul numărului revistei

Articolul precedent

Articolul urmator

102

SM ISO690:2012

ARUSHANOV, Ernest, LANGE, Horst, WERNER, Johannes. Hole mobility in p-type β-FeSi2 single crystals. In: Physica Status Solidi (A) Applied Research, 1998, vol. 166, pp. 853-859. ISSN 0031-8965. DOI: https://doi.org/10.1002/(SICI)1521-396X(199804)166:2<853::AID-PSSA853>3.0.CO;2-9

EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core

Physica Status Solidi (A) Applied Research

Volumul 166 / 1998 / ISSN 0031-8965 /ISSNe 1521-396X

Hole mobility in p-type β-FeSi₂ single crystals

DOI:https://doi.org/10.1002/(SICI)1521-396X(199804)166:2<853::AID-PSSA853>3.0.CO;2-9

Pag. 853-859

Arushanov Ernest¹²³, Lange Horst¹, Werner Johannes⁴

¹ Hahn-Meitner Institut GmbH, Berlin,
² University of Konstanz,
³ Institute of Applied Physics, Academy of Sciences of Moldova,
⁴ Institut für Festkörperphysik, Technische Universität Dresden

Disponibil în IBN: 21 noiembrie 2023

Descarcă PDF

Rezumat

The analysis of mobility in undoped and Al-doped p-type β-FeSi₂ single crystals is performed taking into account acoustic, nonpolar and polar optical phonon scattering as well as scattering by ionised impurities. The dominant scattering mechanisms are determined. The value of the valence band deformation potential is estimated.

Cuvinte-cheie
Acoustic wave scattering, aluminum, Band structure, Crystal impurities, Ionization of solids, light scattering, phonons, Semiconductor doping, single crystals