Crystal order restoration and Zn-impurity activation in InP by As+-coimplantation and annealing
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TIGINYANU, Ion, KRAVETSKY, Igor, URSAKI, Veaceslav, MAROWSKY, Gerd, HARTNAGEL, Hans Ludwig. Crystal order restoration and Zn-impurity activation in InP by As+-coimplantation and annealing. In: Physica Status Solidi (A) Applied Research, 1997, vol. 162, pp. 9-10. ISSN 0031-8965. DOI: https://doi.org/10.1002/1521-396x(199708)162:23.0.co;2-o
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Physica Status Solidi (A) Applied Research
Volumul 162 / 1997 / ISSN 0031-8965 /ISSNe 1521-396X

Crystal order restoration and Zn-impurity activation in InP by As+-coimplantation and annealing

DOI:https://doi.org/10.1002/1521-396x(199708)162:23.0.co;2-o

Pag. 9-10

Tiginyanu Ion12, Kravetsky Igor13, Ursaki Veaceslav1, Marowsky Gerd3, Hartnagel Hans Ludwig2
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University Darmstadt,
3 Laser Laboratory Goettingen
 
 
Disponibil în IBN: 21 noiembrie 2023


Rezumat

InP is known to be characterized by a low activation efficiency of p-type dopants. There were several attempts to improve the activation efficiency of Be and Mg in InP by P plus coimplantation [1 to 3]. The purpose of this work was to study the influence of As plus ion coimplantation on the activation efficiency of Zn-impurity in n-InP as well as on the crystal order recovery during annealing. The latter was investigated by the optical second harmonic generation (SHG) method which proved to be a versatile and sensitive probe of symmetry properties of semiconductor surfaces [4].

Cuvinte-cheie
Annealing, Arsenic, Crystal impurities, Crystal lattices, Crystal symmetry, ion implantation, Second harmonic generation