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![]() TIGINYANU, Ion, KRAVETSKY, Igor, URSAKI, Veaceslav, MAROWSKY, Gerd, HARTNAGEL, Hans Ludwig. Crystal order restoration and Zn-impurity activation in InP by As+-coimplantation and annealing. In: Physica Status Solidi (A) Applied Research, 1997, vol. 162, pp. 9-10. ISSN 0031-8965. DOI: https://doi.org/10.1002/1521-396x(199708)162:2 |
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Physica Status Solidi (A) Applied Research | ||||||
Volumul 162 / 1997 / ISSN 0031-8965 /ISSNe 1521-396X | ||||||
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DOI:https://doi.org/10.1002/1521-396x(199708)162:2 | ||||||
Pag. 9-10 | ||||||
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InP is known to be characterized by a low activation efficiency of p-type dopants. There were several attempts to improve the activation efficiency of Be and Mg in InP by P plus coimplantation [1 to 3]. The purpose of this work was to study the influence of As plus ion coimplantation on the activation efficiency of Zn-impurity in n-InP as well as on the crystal order recovery during annealing. The latter was investigated by the optical second harmonic generation (SHG) method which proved to be a versatile and sensitive probe of symmetry properties of semiconductor surfaces [4]. |
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Cuvinte-cheie Annealing, Arsenic, Crystal impurities, Crystal lattices, Crystal symmetry, ion implantation, Second harmonic generation |
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