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 SM ISO690:2012SINYAVSKII, Elerlanj, KARAPETYAN, S.. Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields. In: Semiconductors, 2014, vol. 48, pp. 216-218. ISSN 1063-7826. DOI: https://doi.org/10.1134/S1063782614020250 |
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  Semiconductors |
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| Volumul 48 / 2014 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/S1063782614020250 | ||||||
| Pag. 216-218 | ||||||
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The effect of an electric field E orthogonal to the quantum-wire axis and a magnetic field H (H ⊥ E, H {norm of matrix} E) on conductivity is studied within the context of the parabolic potential model. It is shown that, if the interaction of charge carriers with the rough surface of the nanostructure is taken into account, the charge-carrier mobility μ as a function of increasing E is described by an unsteady oscillating curve. A physical interpretation of such behavior of μ with E is proposed. The specific features of mobility in a transverse magnetic field are discussed. |
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| Cuvinte-cheie Wurtzite, Semiconductor quantum wells, Zinc sulfide |
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