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 SM ISO690:2012SINYAVSKII, Elerlanj, KARAPETYAN, S.. Effect of a transverse electric field on charge carrier mobility in nanowires. In: Semiconductors, 2012, vol. 46, pp. 1008-1011. ISSN 1063-7826. DOI: https://doi.org/10.1134/S1063782612080210 |
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  Semiconductors |
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| Volumul 46 / 2012 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/S1063782612080210 | ||||||
| Pag. 1008-1011 | ||||||
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For nanowires with a parabolic potential, the effect of an electric field E orthogonal to the system's axis on the mobility of charge carriers μ is investigated. With consideration for the interaction of charge carriers with a rough surface, it is shown that, for a nondegenerate electron (hole) gas, the mobility μ decreases with increasing E. For a degenerate electron (hole) gas, the dependence of μ on E is described by a nonmonotonic oscillating function. A physical interpretation of the predicted effect is proposed. |
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| Cuvinte-cheie Wurtzite, Semiconductor quantum wells, Zinc sulfide |
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