Shubnikov-de haas effect in (Cd1-x-yZnxMny)3As2 under pressure
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LAIHO, Reino, LISUNOV, Konstantin, SHUBNIKOV, M., STAMOV, Vladimir, ZAKHVALINSKII, Vasilii. Shubnikov-de haas effect in (Cd1-x-yZnxMny)3As2 under pressure. In: Physica Status Solidi (B) Basic Research, 1996, vol. 198, pp. 135-141. ISSN 0370-1972. DOI: https://doi.org/10.1002/pssb.2221980119
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Physica Status Solidi (B) Basic Research
Volumul 198 / 1996 / ISSN 0370-1972

Shubnikov-de haas effect in (Cd1-x-yZnxMny)3As2 under pressure

DOI:https://doi.org/10.1002/pssb.2221980119

Pag. 135-141

Laiho Reino1, Lisunov Konstantin2, Shubnikov M.3, Stamov Vladimir2, Zakhvalinskii Vasilii2
 
1 Wihuri Physical Laboratory, University of Turku,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Ioffe Physical-Technical Institute of the Russian Academy of Sciences i
 
 
Disponibil în IBN: 21 septembrie 2023


Rezumat

We have investigated the Shubnikov-de Haas effect in single crystals of the group II-V diluted magnetic semiconductors (Cd1-x-yZnxMny)3As2 (x + y = 0.3, y = 0.06 and 0.08) at temperatures T = 4.2 to 16 K and magnetic fields B = 0 to 6.5 T under hydrostatic pressure p up to 14 kbar. Values of the cyclotron mass mc, the effective g-factor g*, and the Dingle temperature TD have been determined. In both specimens a linear field dependence mc(B) = m*c + aB is observed, where m*c is independent of B but increases with pressure and where a does not depend on p and B. Additionally, pressure dependencies of g*, TD and the Hall mobility μR are observed. The dependence of m*c and g* on p is interpreted within the three-band Kane model. The decrease of μR and TD with increasing pressure is consistent with an increase of m*c.

Cuvinte-cheie
Diluted magnetic semiconductors, ferromagnetism, magnetic properties