The Hall effect in single crystals of the group II-V semiconductor p-CdSb doped with 2 at% of Ni is investigated between T = 1.5 and 300 K in pulsed magnetic fields up to B = 25 T. The Hall resistivity, ρ_H, exhibits a nonlinear dependence on B, which is strongly pronounced below ∼10 K but is still observed even up to 300 K. The analysis of ρ_H(B) gives evidence for the presence of a positive normal and a negative anomalous contribution, ρ_N = R₀B and ρ_A, respectively. The temperature dependence of the (normal) Hall coefficient R ₀ is determined by the activation of holes into the valence band with a small contribution of the itinerant holes from the acceptor band at lowest T. The dependence of ρ_A on T is quite different within two temperature intervals, being weak between ∼50 and 300 K and very strong below ∼50 K, the latter resembling that of the resistivity, ρ. Analysis of ρ_A below ∼77 K demonstrates that it scales approximately as ρⁿ with n = 1.6 0.1 within four decades of ρ_A and more than two decades of ρ. The anomalous Hall effect in p-CdSb:Ni is attributable to the presence of magnetic Ni-rich nanoclusters, whose properties have previously been investigated by the analysis of the magnetization data.