| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012LAIHO, Reino, LASHKUL, Alexander V., LÄHDERANTA, Erkki, NEDEOGLO, Dumitru, NEDEOGLO, Natalia, SHAKHOV, Mikhail. Shallow donor states of Ag impurity in ZnSe single crystals. In: Semiconductor Science and Technology, 2006, vol. 21, pp. 654-660. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/21/5/015 |
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  Semiconductor Science and Technology |
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| Volumul 21 / 2006 / ISSN 0268-1242 | |
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| DOI:https://doi.org/10.1088/0268-1242/21/5/015 | |
| Pag. 654-660 | |
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The Hall coefficient, electrical conductivity and electron mobility are investigated in Ag-doped n-ZnSe single crystals at temperatures between 8 and 500 K immediately after doping the samples and after storing them for 5 years under normal room conditions in darkness. The formation of donor-type Ag i interstitial defects stimulated by time is found for the first time. After 5 years storage, the samples show a dramatic increase in the electrical conductivity, free electron concentration and concentration of shallow donors. A model that explains these changes by the displacement of Ag ions into interstitial sites due to lattice deformation forces is proposed. The formation of an Ag-donor impurity band in n-ZnSe:Zn:Ag crystals stored at room temperature is also studied. |
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| Cuvinte-cheie Electric conductivity, Electron mobility, mathematical models, Semiconducting zinc compounds, Semiconductor doping, single crystals |
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