| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 137 0 |
 SM ISO690:2012LAIHO, Reino, LASHKUL, Alexander V., LISUNOV, Konstantin, LÄHDERANTA, Erkki, SAFONTCHIK, M., SHAKHOV, Mikhail. Hall effect and band structure of p-CdSb in strong magnetic field. In: Semiconductor Science and Technology, 2004, vol. 19, pp. 602-609. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/19/5/008 |
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  Semiconductor Science and Technology |
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| Volumul 19 / 2004 / ISSN 0268-1242 | |
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| DOI:https://doi.org/10.1088/0268-1242/19/5/008 | |
| Pag. 602-609 | |
| Rezumat | |
The Hall effect in the anisotropic II-V group semiconductor p-CdSb is investigated at temperatures between T = 3.6 and 200 K and pulsed magnetic fields up to B = 25 T in unintentionally doped samples oriented along the crystallographic axes [100] and [010]. The Hall coefficient, R(B, T) with B ∥[001] exhibits in low fields a flat region followed by a descending interval when B is increased. This behaviour is attributed to the presence of two groups of holes with concentrations p2(T) > p1(T) and mobilities μ2(T) < μ1(T), respectively. The analysis of p1 (T) and p2(T) demonstrates that below Tcr ∼ 20 K and down to ∼6-7 K the low-mobility carriers p2 are itinerant holes in a deeper acceptor band A2 with an energy E2≈6 meV. The high-mobility carriers p1 are at all temperatures T < Tcr holes activated thermally from A 2 to itinerant states of a shallower acceptor band A1 with an energy E1 ≈ 3 meV. At T > Tcrp1 and p2 are related to the holes activated to the light- and heavy-hole bands, respectively. The analysis of μ1 (T) and μ2(T) confirms the existence of the heavy-hole band or a non-equivalent maximum and two equivalent maxima of the light-hole valence band. |
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| Cuvinte-cheie Approximation theory, Band structure, crystal structure, Data reduction, Hall effect, Magnetic fields, Metal insulator transition, Sensors |
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