Effect of thermal annealing on the structural and optical properties of black silicon

Ayvazyan G.; Vaseashta Ashok; Gasparyan Ferdinand; Khudaverdyan Surik

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AYVAZYAN, G., VASEASHTA, Ashok, GASPARYAN, Ferdinand, KHUDAVERDYAN, Surik. Effect of thermal annealing on the structural and optical properties of black silicon. In: Journal of Materials Science: Materials in Electronics, 2022, vol. 33, pp. 17001-17010. ISSN 0957-4522. DOI: https://doi.org/10.1007/s10854-022-08578-y

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Journal of Materials Science: Materials in Electronics

Volumul 33 / 2022 / ISSN 0957-4522 /ISSNe 1573-482X

Effect of thermal annealing on the structural and optical properties of black silicon

DOI:https://doi.org/10.1007/s10854-022-08578-y

Pag. 17001-17010

Ayvazyan G.¹, Vaseashta Ashok²³⁴, Gasparyan Ferdinand¹⁵, Khudaverdyan Surik¹

¹ National Polytechnic University of Armenia, Yerevan,
² International Clean Water Institute, NUARI,
³ Transilvania University of Brașov,
⁴ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
⁵ Yerevan State University

Disponibil în IBN: 18 august 2023

Rezumat

Black silicon (b-Si) is considered as an ideal material for optoelectronic devices due to its better optical, electrical, and intrinsic properties, such as high surface-to-volume ratio, ultralow light reflection, high chemical activity, and super hydrophobicity. In addition, b-Si materials demonstrate lower band reflection and hence, are used in solar cells as anti-reflective surfaces. Thermal annealing in optoelectronic device processing is known to be standard and crucial fabrication steps; there is a trade-off with device characteristics, which is the case for b-Si. In this experimental investigation, we report the influence of thermal annealing treatment on the optical and structural properties of the b-Si layers fabricated using the plasma-based reactive ion etching method. The results demonstrate that structural properties, i.e., average height, surface enhancement factor, and root mean square roughness of b-Si layers after annealing at different temperatures changed quite significantly. This leads to deterioration of optical properties like reflection and absorption of b-Si layers. Finally, a new fabrication process of b-Si solar cells is proposed and tested. According, the b-Si layer is grown after the high-temperature diffusion process. The results of this study show that the new b-Si solar cell performance parameters are improved compared to that of the conventional solar cell. This can increase b-Si material extension to other applications.

Cuvinte-cheie
Annealing, Economic and social effects, Hydrophobicity, optical properties, Optoelectronic devices, Silicon, Silicon compounds, Silicon solar cells, structural properties

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