Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
178 0 |
SM ISO690:2012 SCHON, Jan Hendrik, ARUSHANOV, Ernest, KULYUK, Leonid, MICU, A., SHABAN, D., TEZLEVAN, Victor, FABRE, Norbert, BUCHER, Ernst. Electrical and optical characterization of ion-implanted CuGaSe2 single crystals. In: Journal of Applied Physics, 1998, vol. 84, pp. 1274-1278. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.368194 |
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Journal of Applied Physics | ||||||
Volumul 84 / 1998 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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DOI:https://doi.org/10.1063/1.368194 | ||||||
Pag. 1274-1278 | ||||||
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CuGaSe2 single crystals were doped with B and Ge by ion implantation and analyzed by Hall effect, photoluminescence, and reflected second harmonic generation measurements. After ion implantation the crystals exhibited a destroyed surface structure. Measurements of the band edge photoluminescence and the second harmonic generation before and after annealing clearly reflected the thermal healing of the implantation-induced crystalline defects. As expected the analysis of the electrical measurements showed the incorporation of donor levels due to implantation with B and Ge, which led to electrically compensated samples. However no n-type conductivity could be obtained. This is ascribed to self-compensation of the defects for implantation ion doses higher than 1015 cm-2. |
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Cuvinte-cheie Engineering controlled terms Crystal defects, Electric conductivity, Electric properties, Electric variables measurement, Hall effect, ion implantation, optical properties, Optical variables measurement, photoluminescence, Second harmonic generation, single crystals, Thermal effects Engineering uncontrolled terms Band edge photoluminescence, Copper gallium selenide, Reflected second harmonic generation measurement, Thermal heating Engineering main heading Semiconducting gallium compounds |
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