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 SM ISO690:2012BAKHADIRKHANOV, M., ILIEV, Kh.. Tenso-hall effect in compensated silicon. In: Электронная обработка материалов, 2001, nr. 6(37), pp. 83-85. ISSN 0013-5739. |
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 Электронная обработка материалов |
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| Numărul 6(37) / 2001 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 83-85 | ||||||
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The Hall effect" for unaxial compression at temperature 300K has been investigated on Si, compensated with S of various concentration. The curves p(x)/p0 from the uncompensated (with no S) crystals display saturation, in case of S-compensated crystals a maximum is observed. The concentration of free electrons in the uncompensated crystals was found to be independent of pressure. Their mobility decreases to saturate at the pressure of 7.108 Pa. In S-compensaled crystals free electron concentration increases with the rise of pressure, their mobility decreases, hence the curves p(x)/p0 show maximum. The reason for the increase of the concentration of free electrons in S-compensated Si is elucidated. |
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