As a result of study an infrared absorption spectrums of photoresist films, subjected to processing by different types of energy actions, it was established that microwave plasmachemical processing is characterized by more considerable structural changes in the material of a photoresist films in comparison with processing in high frequency oxygen discharge or thermic action. These changes can be stipulated by a plurality of physical and chemical factors rendering destructive action on a component composition of a film. These factors can be: action of a ultra high frequency field on the film and substrate; thermal action by plasma of the discharge; action with a flow of active plasma particles.