Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

Sirkeli Vadim; Yilmazoglu Oktay; Kuppers Franko; Hartnagel Hans Ludwig

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SIRKELI, Vadim, YILMAZOGLU, Oktay, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures. In: Semiconductor Science and Technology, 2015, vol. 30, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/30/6/065005

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Semiconductor Science and Technology

Volumul 30 / 2015 / ISSN 0268-1242

Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures

DOI:https://doi.org/10.1088/0268-1242/30/6/065005

Pag. 0-0

Sirkeli Vadim¹²³, Yilmazoglu Oktay¹, Kuppers Franko¹, Hartnagel Hans Ludwig¹

¹ Technical University Darmstadt,
² Moldova State University,
³ Comrat State University

Disponibil în IBN: 17 mai 2023

Rezumat

We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm^-2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10^-4, 1.6 × 10^-4, and 6.4 lm W^-1 of PE, and 1.3 × 10^-4, 2.9 × 10^-4, and 12 cd A^-1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.

Cuvinte-cheie
Gallium nitride, internal quantum efficiency, light-emitting diode, nickel oxide, zinc oxide, Zinc selenide

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<cfAbstr cfLangCode='EN' cfTrans='o'><p>We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm<sup>-2</sup>&nbsp;is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 &times; 10<sup>-4</sup>, 1.6 &times; 10<sup>-4</sup>, and 6.4 lm W<sup>-1</sup>&nbsp;of PE, and 1.3 &times; 10<sup>-4</sup>, 2.9 &times; 10<sup>-4</sup>, and 12 cd A<sup>-1</sup>&nbsp;of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.</p></cfAbstr>
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