Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system

Senokosov Edward; Chukita V.; Odin Ivan; Chukichev Mikhail

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SENOKOSOV, Edward, CHUKITA, V., ODIN, Ivan, CHUKICHEV, Mikhail. Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system. In: Inorganic Materials, 2015, vol. 51, nr. 1, pp. 5-10. ISSN 0020-1685. DOI: https://doi.org/10.1134/S0020168515010173

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Inorganic Materials

Volumul 51, Numărul 1 / 2015 / ISSN 0020-1685 /ISSNe 1608-3172

Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system

DOI:https://doi.org/10.1134/S0020168515010173

Pag. 5-10

Senokosov Edward¹, Chukita V.¹, Odin Ivan², Chukichev Mikhail ²

¹ T.G. Shevchenko State University of Pridnestrovie, Tiraspol,
² Lomonosov Moscow State University

Disponibil în IBN: 5 mai 2023

Rezumat

We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n-CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n-CdSe epilayers grown under near-equilibrium high-temperature deposition conditions.

Cuvinte-cheie
CdSe, Electron beam excitation, Epilayers grown, Growth process, High-temperature deposition, Quasi-closed systems

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<title xml:lang='en'>Cathodoluminescence quantum yield of cdse epilayers grown in a quasi-closed system</title>
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<subject>CdSe</subject>
<subject>Electron beam excitation</subject>
<subject>Epilayers grown</subject>
<subject>Growth process</subject>
<subject>High-temperature deposition</subject>
<subject>Quasi-closed systems</subject>
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