Photovoltaic structures ITO/SiOх/n-Si of increased efficiency
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SIMASHKEVICH, Aleksey, SHERBAN, Dormidont, CARAMAN, Mihail, RUSU, Marin, BRUC, Leonid, CURMEI, Nicolai. Photovoltaic structures ITO/SiOх/n-Si of increased efficiency. In: Surface Engineering and Applied Electrochemistry, 2016, nr. 3(52), pp. 284-288. ISSN 1068-3755. DOI: https://doi.org/10.3103/S1068375516030108
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Surface Engineering and Applied Electrochemistry
Numărul 3(52) / 2016 / ISSN 1068-3755 /ISSNe 1934-8002

Photovoltaic structures ITO/SiOх/n-Si of increased efficiency

DOI:https://doi.org/10.3103/S1068375516030108

Pag. 284-288

Simashkevich Aleksey1, Sherban Dormidont1, Caraman Mihail2, Rusu Marin3, Bruc Leonid1, Curmei Nicolai1
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Moldova State University,
3 Helmholtz-Centre Berlin for Materials and Energy
 
 
Disponibil în IBN: 18 ianuarie 2023


Rezumat

Structures ITO/SiOх/n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiOх/n-Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.

Cuvinte-cheie
conversion efficiency, heterojunciton, ITO, Si, solar cell (SC)