| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012LAVROV, Sergey, KUDRYAVTSEV, Andrei, SHESTAKOVA, Anastasia, KULYUK, Leonid, MISHINA, E.. Second harmonic generation in nanoscale films of transition metal chalcogenides: Taking into account multibeam interference. In: Optics and Spectroscopy (English translation of Optika i Spektroskopiya), 2016, nr. 5(120), pp. 808-814. ISSN 0030-400X. DOI: https://doi.org/10.1134/S0030400X16050180 |
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  Optics and Spectroscopy (English translation of Optika i Spektroskopiya) |
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| Numărul 5(120) / 2016 / ISSN 0030-400X | ||||||
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| DOI:https://doi.org/10.1134/S0030400X16050180 | ||||||
| Pag. 808-814 | ||||||
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Second harmonic generation is studied in structures containing nanoscale layers of transition metal chalcogenides that are two-dimensional semiconductors and deposited on a SiO2/Si substrate. The second harmonic generation intensity is calculated with allowance for multibeam interference in layers of dichalcogenide and silicon oxide. The coefficient of reflection from the SiO2-layer-based Fabry–Perot cavity is subsequently calculated for pump wave fields initiating nonlinear polarization at every point of dichalcogenide, which is followed by integration of all second harmonic waves generated by this polarization. Calculated second harmonic intensities are presented as functions of dichalcogenide and silicon oxide layer thicknesses. The dependence of the second harmonic intensity on the MoS2 layer thickness is studied experimentally in the layer of 2–140 nm. A good coincidence of the experimental data and numerical simulation results has been obtained. |
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| Cuvinte-cheie Chalcogenides, harmonic analysis, Inorganic compounds, nanotechnology, Nonlinear optics, polarization, Silicon oxides, Substrates, transition metals |
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