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![]() BODNAR, Ivan V., OSIPOVA, M., RUD, V., RUD, Yu., VICTOROV, Ivan. MSP 1P Shottky barriers on the base of MnIn2S4 single crystals. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 71. |
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Materials Science and Condensed Matter Physics Editia 5, 2010 |
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Conferința "Materials Science and Condensed Matter Physics" Chișinău, Moldova, 13-17 septembrie 2010 | |
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Pag. 71-71 | |
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Results of investigation of In/MnIn2S4 Shottky barriers have been presented in the given work. The indicated barriers were created by vacuum thermal deposition of indium thin films on MnIn2S4 single crystals grown by Bridgman’s method. Silver compound was used as ohmic contact. The crystals obtained reveal n-type of conductivity and resistivity r»109-1010 Ω×cm at 300 K. In the temperature interval 300-450 K the resistivity follows to exponential law: |
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