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Prezenţa autorilor din străinătate în revista Semiconductor Science and Technology

Afisarea articolelor: 1-20(39)

2020

TRONCIU, V., dr., WENZEL, H., Leibniz-Insitut für Höchstfrequenztechnik, Berlin, Germania, KNIGGE, A., Leibniz-Insitut für Höchstfrequenztechnik, Berlin, Germania Theoretical studies of the generation of picoseconds pulses with two-section blue-violet semiconductor lasers. Semiconductor Science and Technology. 2020, nr. , 0-0. ISSN 0268-1242.

2019

BRANISTE, T., dr., ZHUKOV, S., Moscow Institute of Physics and Technology, Rusia, DRAGOMAN, M., Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România, ALYABYEVA, L., Moscow Institute of Physics and Technology, Rusia, CIOBANU, V., dr., ALDRIGO, M., Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România, DRAGOMAN, D., Universitatea din Bucureşti, România, IORDANESCU, S., Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România, SHREE, S., Institute for Material Science, Christian-Albrechts-University of Kiel, Germania, RAEVSKY, S., ADELUNG, R., Institute for Material Science, Christian-Albrechts-University of Kiel, Germania, GORSHUNOV, B., Moscow Institute of Physics and Technology, Rusia, TIGINYANU, I., dr. Terahertz shielding properties of aero-GaN . Semiconductor Science and Technology. 2019, nr. , 6-1. ISSN 0268-1242.

2018

CENGIZ, A., Gebze Technical University, Turcia, CHUMAKOV, Y., dr., ERDEM, M., Gebze Technical University, Turcia, ŞALE, Y., Gebze Technical University, Turcia, MIKAILZADE, F., Gebze Technical University, Turcia, SEYIDOV, M., Gebze Technical University, Turcia Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range. Semiconductor Science and Technology. 2018, nr. , 0-0. ISSN 0268-1242.

2017

DRAGOMAN, M., Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România, DRAGOMAN, D., Universitatea din Bucureşti, România, TIGINYANU, I., dr. Atomically thin semiconducting layers and nanomembranes: A review. Semiconductor Science and Technology. 2017, nr. , 0-0. ISSN 0268-1242.

2016

FOLL, H., Institute for Material Science, Christian-Albrechts-University of Kiel, Germania, GERNGROSS, M., Institute for Material Science, Christian-Albrechts-University of Kiel, Germania, SAILOR, M., University of California, San Diego, Statele Unite ale Americii, TIGINYANU, I., dr. Special issue on electrochemical processing of semiconductor materials. Semiconductor Science and Technology. 2016, nr. , 0-0. ISSN 0268-1242.

2015

CHUMASH, V., dr.hab, Institutul de Fizică Aplicată al AŞM, Moldova, Republica, COJOCARU, I., dr., BOSTAN, G., PARA, G., dr., DE CESARE, G., Universitatea „La Sapienza“, Italia, LA MONICA, S., Universitatea „La Sapienza“, Italia, MAIELLO, G., Universitatea „La Sapienza“, Italia, FERRARI, A., Universitatea „La Sapienza“, Italia Optical hysteresis and nonlinear light absorption in a-Si:H and a-SiC:H thin films. Semiconductor Science and Technology. 2015, nr. , 28-23. ISSN 0268-1242.

DMITRUK, N., Академия экономических наук Украины, Ucraina, GONCHARENKO, A., GOREA, O., ROMANIUK, V., TATARINSKAYA, O., VENGER, Y., V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Science of Ukraine, Ucraina Far-infrared spectroscopy of polar semiconductor superlattices (GaAs-GaPxAs1-x). Semiconductor Science and Technology. 2015, nr. , 143-138. ISSN 0268-1242.

8.	CHUMASH, V., dr.hab, Institutul de Fizică Aplicată al AŞM, Moldova, Republica, BOSTAN, G., COJOCARU, I., dr., MINCU, N., CERBARI, P. Nonlinear absorption of laser pulses in amorphous and crystalline As2S3 thin films. Semiconductor Science and Technology. 2015, nr. , 225-221. ISSN 0268-1242.

MONAICO, E., dr., POSTOLACHE, V., dr., BORODIN, E., URSACHI, V., dr.hab, LUPAN, O., dr., ADELUNG, R., Institute for Material Science, Christian-Albrechts-University of Kiel, Germania, NIELSCH, K., Universitatea din Hamburg, Germania, TIGINYANU, I., dr. Control of persistent photoconductivity in nanostructured InP through morphology design. Semiconductor Science and Technology. 2015, nr. , 7-1. ISSN 0268-1242.

10.

SIRKELI, V., dr., YILMAZOGLU, O., Institute of Microwave Engineering and Photonics, Technical University of Darmstadt, Germania, KUPPERS, F., Institute of Microwave Engineering and Photonics, Technical University of Darmstadt, Germania, HARTNAGEL, H., Universitatea Tehnică, Darmstadt, Germania Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures. Semiconductor Science and Technology. 2015, nr. , 0-0. ISSN 0268-1242.

11.

STEELE, J., Institute for Superconducting and Electronic Materials, School of Physics, University of Wollongong, Wollongong, Australia, ROGER LEWIS, R., Institute for Superconducting and Electronic Materials, School of Physics, University of Wollongong, Wollongong, Australia, SIRBU, L., dr., ENACHI, M., dr., TIGINYANU, I., dr., SKURATOV, V., Universitatea Tehnică a Moldovei, Moldova, Republica Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane. Semiconductor Science and Technology. 2015, nr. , 0-0. ISSN 0268-1242.

2014

12.

CHERNIKOV, A., Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia, NOLLE, E., Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia, PROKHOROV, A., Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia, RUSSU, E., SCHELEV, M., Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia, SOKOL, E., Институт общей физики им. А.М. Прохорова Российской академии наук, Rusia IR photocathodes for streak image tubes based on semiconductor heterostructures and superlattices. Semiconductor Science and Technology. 2014, nr. , 245-238. ISSN 0268-1242.

13.

MICHELOTTI, F., Universitatea „La Sapienza“, Italia, BERTOLOTTI, M., Universitatea „La Sapienza“, Italia, CHUMASH, V., dr.hab, Institutul de Fizică Aplicată al AŞM, Moldova, Republica, ANDRIESH, A., dr.hab Chalcogenide glass thin films: Z-Scan measurements of refractive index changes. Semiconductor Science and Technology. 2014, nr. , 432-423. ISSN 0268-1242.

14.

KOLIBABA, G., dr., MONAICO, E., dr., GONCEARENCO, E., NEDEOGLO, D., dr.hab, TIGINYANU, I., dr., NIELSCH, K., Universitatea din Hamburg, Germania Growth of ZnCdS single crystals and prospects of their application as nanoporous structures. Semiconductor Science and Technology. 2014, nr. , 0-0. ISSN 0268-1242.

15.

RADHANPURA, K., Institute for Superconducting and Electronic Materials, School of Physics, University of Wollongong, Wollongong, Australia, ROGER LEWIS, R., Institute for Superconducting and Electronic Materials, School of Physics, University of Wollongong, Wollongong, Australia, SIRBU, L., dr., ENACHI, M., dr., TIGINYANU, I., dr., SKURATOV, V., Universitatea Tehnică a Moldovei, Moldova, Republica Effect of heavy noble gas ion irradiation on terahertz emission efficiency of InP (100) and (111) crystal planes. Semiconductor Science and Technology. 2014, nr. , 0-0. ISSN 0268-1242.

2012

16.

CHERNICHKIN, V., Universitatea de Stat M.V. Lomonosov din Moscova, Rusia, RYABOVA, L., Universitatea de Stat M.V. Lomonosov din Moscova, Rusia, NIKORICH, A., dr., KHOKHLOV, D., Universitatea de Stat M.V. Lomonosov din Moscova, Rusia Monopolar photoelectromagnetic effect in Pb 1xSn xTe(In) under terahertz laser radiation. Semiconductor Science and Technology. 2012, nr. , 4-1. ISSN 0268-1242.

2011

17.

LISUNOV, K., VINZELBERG, H., Leibniz-Institut für Festkörper und Werkstofforschung Dresden - IFW Dresden, Germania, ARUSHANOV, E., dr.hab, SCHUMANN, J., Institut fuer Integrative Nanowissenschaften, Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Germania Variable-range hopping conduction and metal-insulator transition in amorphous RexSi1-x thin films. Semiconductor Science and Technology. 2011, nr. , 8-1. ISSN 0268-1242.

2009

18.	LAIHO, R., LASHKUL, A., Lappeenranta University of Technology, Finlanda, LISUNOV, K., LÄHDERANTA, E., Lappeenranta University of Technology, Finlanda Shubnikov-de Haas effect in n-CdSb:In under pressure. Semiconductor Science and Technology. 2009, nr. , 7-1. ISSN 0268-1242.

19.	URSACHI, V., dr.hab, ZALAMAI, V., dr., BURLACU, A., dr., KLINGSHIRN, C., Universitatea Karlsruhe, Germania, MONAICO, E., dr., TIGINYANU, I., dr. Random lasing in nanostructured ZnO produced from bulk ZnSe. Semiconductor Science and Technology. 2009, nr. , 0-0. ISSN 0268-1242.

2008

20.

LAIHO, R., LASHKUL, A., Lappeenranta University of Technology, Finlanda, LISUNOV, K., LÄHDERANTA, E., Lappeenranta University of Technology, Finlanda, SHAKHOV, M., Lappeenranta University of Technology, Finlanda, ZAKHVALINSKII, V., Белгородский государственный национальный исследовательский университет, Россия, Rusia The Hall effect in Ni-doped p-CdSb in a strong magnetic field. Semiconductor Science and Technology. 2008, nr. , 6-1. ISSN 0268-1242.

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