Atomically thin semiconducting layers and nanomembranes: A review
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DRAGOMAN, Mircea L., DRAGOMAN, Daniela, TIGINYANU, Ion. Atomically thin semiconducting layers and nanomembranes: A review. In: Semiconductor Science and Technology, 2017, vol. 32, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/1361-6641/aa5206
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Semiconductor Science and Technology
Volumul 32 / 2017 / ISSN 0268-1242

Atomically thin semiconducting layers and nanomembranes: A review

DOI:https://doi.org/10.1088/1361-6641/aa5206

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Dragoman Mircea L.1, Dragoman Daniela23, Tiginyanu Ion45
 
1 National Institute for Research and Development in Microtechnologies ,
2 University of Bucharest,
3 Romanian Academy of Science,
4 Technical University of Moldova,
5 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
 
 
Disponibil în IBN: 19 martie 2018


Rezumat

This article reviews the main physical properties of atomically thin semiconductors and the electronic devices based on them. We start with graphene, describing its physical properties and growth methods, followed by a discussion of its electronic device applications. Then, transition metal dichalcogenides (TMDs) are analyzed as a prototype of atomically thin semiconductors, their physical properties, growth methods, and electronic devices are discussed in detail. Finally, non-layered semiconducting membranes with thicknesses ranging from a few nanometers to about 50 nm, and considered as counterparts of atomically thin semiconductors, are analyzed, and their applications presented.

Cuvinte-cheie
2D semiconductors, heterostructures, semiconductor membranes