IBN
Închide
Cengiz Asuman
Cuvinte-cheie (3): Taucs energy (1), optical energy band gap semiconductor (1), Electronic band structure calculation (1)
Dinamica numărului de publicaţii pe ani
Dinamica articolelor pe ani
Distribuirea numărului de pagini publicate pe categorii de reviste și ani
Distribuirea articolelor pe domenii şi ani
Colaborarea autorului
Dinamica descărcărilor pe ani
Scopus Author ID

Publicaţii la conferinţe din RM - 1. Publicaţii peste hotare - 1.
XLS PDF DOC
SM ISO690:2012

2018 - 2

Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range
Cengiz Asuman12, Chumakov Yurii32, Erdem Mehmet1, Şale Yasin1, Mikailzade Faik A.14, Seyidov Mir Hasan Yu41
1 Gebze Technical University,
2 Kocaeli University, Kocaeli,
3 Institute of Applied Physics, Academy of Sciences of Moldova,
4 Institute of Physics, National Academy of Sciences of Azerbaijan
Semiconductor Science and Technology
Nr. 7(33) / 2018 / ISSN 0268-1242
Disponibil online 9 August, 2018. Descarcări-2. Vizualizări-142
-----------------------------------------------------------------------------------------------------------------------------------
The effect of defect density wave on optical properties of TlGaSe2 ferroelectric – semiconductor near the fundamental electronic band gap. Theoretical and experimental results
Cengiz Asuman12, Şale Yasin1, Chumakov Yurii13, Seyidov Mir Hasan Yu14
1 Gebze Technical University,
2 Kocaeli University, Kocaeli,
3 Institute of Applied Physics,
4 Institute of Physics, National Academy of Sciences of Azerbaijan
Materials Science and Condensed Matter Physics
Ediția a 9-a. 2018. Chișinău, Republica Moldova. .
Disponibil online 15 January, 2019. Descarcări-2. Vizualizări-131
-----------------------------------------------------------------------------------------------------------------------------------
1 - 2 of 2