Terahertz shielding properties of aero-GaN
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BRANIŞTE, Tudor; ZHUKOV, Sergey; DRAGOMAN, Mircea L.; ALYABYEVA, L.; CIOBANU, Vladimir; ALDRIGO, Martino; DRAGOMAN, Daniela; IORDANESCU, Sergiu A.; SHREE, Sindu; RAEVSCHI, Simion; ADELUNG, Rainer; GORSHUNOV, Boris; TIGINYANU, Ion. Terahertz shielding properties of aero-GaN . In: Semiconductor Science and Technology. 2019, nr. 12(34), p. 0. ISSN 0268-1242.
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Semiconductor Science and Technology
Numărul 12(34) / 2019 / ISSN 0268-1242

Terahertz shielding properties of aero-GaN

DOI: 10.1088/1361-6641/ab4e58
Pag. 0-0

Branişte Tudor1, Zhukov Sergey2, Dragoman Mircea L.3, Alyabyeva L.2, Ciobanu Vladimir1, Aldrigo Martino3, Dragoman Daniela4, Iordanescu Sergiu A.3, Shree Sindu5, Raevschi Simion6, Adelung Rainer5, Gorshunov Boris2, Tiginyanu Ion17
1 Technical University of Moldova,
2 Moscow Institute of Physics and Technology,
3 National Institute for Research and Development in Microtechnologies ,
4 University of Bucharest,
5 University of Kiel,
6 State University of Moldova,
7 Academy of Sciences of Moldova
Disponibil în IBN: 7 aprilie 2020


The electrodynamic properties of the first aero-material based on compound semiconductor, namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4-100 cm-1 and in the temperature interval 4-300 K. The shielding properties are found based on experimental data. The aero-material shows excellent shielding effectiveness in the frequency range from 0.1 to 1.3 THz, exceeding 40 dB in a huge frequency bandwidth, which is of high interest for industrial applications. These results place the aero-GaN among the best THz shielding materials known today. 

aero-GaN, complex dielectric permittivity, THz shielding