Nowadays, rare-earth elements (REE) are widely used as doping material. Incorporation of REE in the crystals give possibility to obtain new irradiation bands due to necessaries in the optics and optoelectronics. However, REE have a weak property of incorporation into the crystals or low transport values, while doping or growing respectively, in the vapour transport methods. In this case, it is important to define the best growth conditions of the ZnSe single crystals where would be efficient doping with gadolinium ions. The Gd doped ZnSe single crystals from 900 to 1050°C had been grown. The doping impurity amount and the purity of the source elements had been maintained. Luminescent properties have been investigated in the 400-800 nm range at 100 and 300K. Single crystals have been excited by impulse gas-discharge laser with λexc = 337 nm. It is known, “pure” ZnSe single crystals radiate only in the short-wavelength visible spectral region, called edge-band radiation. Figure demonstrates edge-band radiation of the ZnSe:Gd single crystals grown at different temperatures. Figure 1. Edge-band spectra (a) and normalized (b) of the ZnSe:Gd single crystals grown at: 1 – 900°С; 2 – 950°С; 3 – 1000°С; 4 – 1050°С. Т=100К. Inset: temperature dependences of the edge-band intensity (a) and its position (b). Figure indicates that increasing temperature in the growth chamber causes decrease of the edge-band intensity and position shifts to the short-wavelength region. These dependences are linear and are shown in the insets. In the long-wavelength spectral region the detected band intensities is quenching with the temperature growth in the chamber. We suppose, the crystal lattice extends with increasing temperature in the growth chamber giving possibility to the REE ions to migrate freely and to occupy the advantageous energetically sites. Hence, vacancies are filled up and the background impurity is displaced, which is responsible for the long-wavelength radiation. As a result, the edge-band radiation shifts toward higher energies (fig. 1b), and the band in the longwavelength region is vanished. Experimentally we observe decrease of the edge-band intensity (fig. 1a) as it is expected from our previous suppose and the Gd impurity property to capture migrate energy through the crystal.