| Conţinutul numărului revistei |
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 SM ISO690:2012MADATOV, R., НАДЖАФОВ, А., МАМЕДОВ, Вугар, MAMEDOV, M. Анизотропия электропроводности в облученных кристаллах TlInS2. In: Электронная обработка материалов, 2010, nr. 2(46), pp. 77-79. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 2(46) / 2010 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 77-79 | ||||||
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Investigations of anisotropy of electric conductivity in the hexagonal crystals of TlInS2, irradiated by gamma-rays are conducted. It is found that at low-dose irradiation (~50 krad) the accumulation of radiation defects takes place in the interlayer space as well as in the plane of layers. This results in decrease of σ⊥С and σiiС electric conductivity. At high-dose irradiation (more than 200 krad) a formation of complex defects takes place due to the interaction between radiation defects with the original inhomogeneities. As a result, electric conductivity in both directions increases exponentially. |
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