Анизотропия электропроводности в облученных кристаллах TlInS2
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MADATOV, R., НАДЖАФОВ, А., МАМЕДОВ, Вугар, MAMEDOV, M. Анизотропия электропроводности в облученных кристаллах TlInS2. In: Электронная обработка материалов, 2010, nr. 2(46), pp. 77-79. ISSN 0013-5739.
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Электронная обработка материалов
Numărul 2(46) / 2010 / ISSN 0013-5739 /ISSNe 2345-1718

Анизотропия электропроводности в облученных кристаллах TlInS2

Pag. 77-79

Madatov R., Наджафов А., Мамедов Вугар, Mamedov M
 
Институт радиационных проблем НАН Азербайджана
 
 
Disponibil în IBN: 31 martie 2017


Rezumat

Investigations of anisotropy of electric conductivity in the hexagonal crystals of TlInS2, irradiated by gamma-rays are conducted. It is found that at low-dose irradiation (~50 krad) the accumulation of radiation defects takes place in the interlayer space as well as in the plane of layers. This results in decrease of σ⊥С and σiiС electric conductivity. At high-dose irradiation (more than 200 krad) a formation of complex defects takes place due to the interaction between radiation defects with the original inhomogeneities. As a result, electric conductivity in both directions increases exponentially.

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