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<creators>
<creator>
<creatorName>Vasiliev, I.A.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Iovu, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Colomeico, E.P.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2011</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2011-06-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 
0.09,  0.14,  0.16,  0.18,  0.20  0.25,  and  0.30.  Compositional  dependences  of  the  low-frequency 
dielectric permeability, decay  time constant and  the Kohlrausch parameter of nonexponentiality 
are  deduced  from  these  data. All  parameters  show  two  compositional  thresholds,  one  situated 
near  the xc(1)=0.09,  and  the other near  the xc(2)=0.16-0.18. These phase  transitions have been 
identified  in  the  bulk  samples  by  means  of  a  differential-scanning  calorimetric  method  
(P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).  
</description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>