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 SM ISO690:2012VASILIEV, Ion, YOVU, M., KOLOMEYKO, Eduard. Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films. In: Moldavian Journal of the Physical Sciences, 2011, nr. 2(10), pp. 189-193. ISSN 1810-648X. |
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| Moldavian Journal of the Physical Sciences | ||||||
| Numărul 2(10) / 2011 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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| Pag. 189-193 | ||||||
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The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07,
0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency
dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality
are deduced from these data. All parameters show two compositional thresholds, one situated
near the xc(1)=0.09, and the other near the xc(2)=0.16-0.18. These phase transitions have been
identified in the bulk samples by means of a differential-scanning calorimetric method
(P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).
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