Cd1-xMnxTe crystals are among the most efficient, from the practical point of view, semimagnetic semiconductors, which could be used in optoelectronic and magneto-optic devices [1, 2]. However, their using is limited by such factors as high concentration of inherited pointlike defects and uncontrolled impurities, non-uniform distribution of the dissolved substance, presence of the inclusions of the second phase, mechanical stress, etc. The presence of these defects, first of all, is stipulated by the technological conditions of material fabrication [3, 4]. To decrease the number of defects, the annealing in the vapor or melt of components is carried out. In the given paper, the results of the investigation of the galvano-magnetic properties of Cd1-xMnxTe crystals annealed in a medium of cadmium are described.