| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012SIA, Engkee, HAO, Maosheng, CHUA, Soo Jin, TIGINYANU, Ion, ICHIZLI, V., MUTAMBA, Kabula, HARTNAGEL, Hans Ludwig, ZHANG, Ji, TRIPATHY, Sudhiranjan R.. Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates. In: Proceedings of SPIE - The International Society for Optical Engineering, 2001, vol. 4594, pp. 201-210. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.446586 |
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 Proceedings of SPIE - The International Society for Optical Engineering |
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| Volumul 4594 / 2001 / ISSN 0277-786X /ISSNe 1996-756X | |
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| DOI:https://doi.org/10.1117/12.446586 | |
| Pag. 201-210 | |
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Continuous GaN films were grown on the top of cracked Si-doped n+-GaN epilayers by MOCVD techniques. Raman-scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using X-ray diffraction analysis was as low as 0.036 GPa for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n+-GaN:Si layer is perspective for growing high quality GaN films. |
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| Cuvinte-cheie Compressive stress, Cracks, Film growth, Gallium nitride, Metallorganic chemical vapor deposition, optimization, Raman scattering, Semiconducting silicon, Semiconductor doping, X ray diffraction analysis |
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