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 SM ISO690:2012SIA, Engkee, HAO, Maosheng, CHUA, Soo Jin, TIGINYANU, Ion, ICHIZLI, V., MUTAMBA, Kabula, HARTNAGEL, Hans Ludwig, ZHANG, Ji, TRIPATHY, Sudhiranjan R.. Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates. In: Proceedings of SPIE - The International Society for Optical Engineering, 2001, vol. 4594, pp. 201-210. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.446586 |
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 Proceedings of SPIE - The International Society for Optical Engineering |
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| Volumul 4594 / 2001 / ISSN 0277-786X /ISSNe 1996-756X | |
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| DOI:https://doi.org/10.1117/12.446586 | |
| Pag. 201-210 | |
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Continuous GaN films were grown on the top of cracked Si-doped n+-GaN epilayers by MOCVD techniques. Raman-scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using X-ray diffraction analysis was as low as 0.036 GPa for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n+-GaN:Si layer is perspective for growing high quality GaN films. |
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| Cuvinte-cheie Compressive stress, Cracks, Film growth, Gallium nitride, Metallorganic chemical vapor deposition, optimization, Raman scattering, Semiconducting silicon, Semiconductor doping, X ray diffraction analysis |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Sia, E.</dc:creator> <dc:creator>Hao, M.</dc:creator> <dc:creator>Chua, S.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Ichizli, V.M.</dc:creator> <dc:creator>Mutamba, K.</dc:creator> <dc:creator>Hartnagel, H.</dc:creator> <dc:creator>Zhang, J.</dc:creator> <dc:creator>Tripathy, S.</dc:creator> <dc:date>2001-10-02</dc:date> <dc:description xml:lang='en'><p>Continuous GaN films were grown on the top of cracked Si-doped n<sup>+</sup>-GaN epilayers by MOCVD techniques. Raman-scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using X-ray diffraction analysis was as low as 0.036 GPa for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n<sup>+</sup>-GaN:Si layer is perspective for growing high quality GaN films.</p></dc:description> <dc:identifier>10.1117/12.446586</dc:identifier> <dc:source>Proceedings of SPIE - The International Society for Optical Engineering () 201-210</dc:source> <dc:subject>Compressive stress</dc:subject> <dc:subject>Cracks</dc:subject> <dc:subject>Film growth</dc:subject> <dc:subject>Gallium nitride</dc:subject> <dc:subject>Metallorganic chemical vapor deposition</dc:subject> <dc:subject>optimization</dc:subject> <dc:subject>Raman scattering</dc:subject> <dc:subject>Semiconducting silicon</dc:subject> <dc:subject>Semiconductor doping</dc:subject> <dc:subject>X ray diffraction analysis</dc:subject> <dc:title>Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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