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 SM ISO690:2012MUŞINSCHI, Valeriu, CARAMAN, Mihail, GHIZDEANU, G., STAMATE, Marius D.. Thermally stimulated currents and thermoluminescence in layer semiconductor InSe. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 395-398. DOI: https://doi.org/10.1109/SMICND.1995.495044 |
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| Proceedings of the International Semiconductor Conference 1995 | ||||||
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Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1995.495044 | ||||||
| Pag. 395-398 | ||||||
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The electron trapping centers of InSe crystals grown by Bridgman method are investigated by using photoelectronic techniques, such as thermally stimulated current (TSC) and thermoluminescence (TL). Several electron trapping centers, between 0,11 to 0,42 eV below the conduction band, with densities ranging from 1014 to 1015 cm-3 and capture cross-sections between 10-17 to 10-20 cm2 are found. |
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| Cuvinte-cheie Electron trapping centers, Indium selenide, Thermally stimulated currents |
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