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 SM ISO690:2012URSACHI, Veaceslav, TIGINYANU, Ion, ICHIZLI, V., TERLETSKY, Andrei, PYSHNAYA, N., RADAUTSANU, Sergiu. Zn+/P+ and Zn+/As+ co-implantation in InP single crystals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 2, pp. 401-404. DOI: https://doi.org/10.1109/SMICND.1996.557405 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557405 | ||||||
| Pag. 401-404 | ||||||
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The activation efficiency of zinc impurity co-implanted with P+ and As+ ions in InP was studied by Hall-effect measurements. Both P+ and As+ co-implantations followed by post-implantation annealing at 400 to 600°C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures Tann > 600°C. |
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| Cuvinte-cheie Annealing, Arsenic, Crystals, Hall effect, High temperature effects, ion implantation, Ions, phosphorus, Zinc |
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