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 SM ISO690:2012GHIMPU, Lidia. Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin films heterojunctions. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 22, 5-9 octombrie 1999, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1999, Vol. 1, pp. 347-349. DOI: https://doi.org/10.1109/SMICND.1999.810534 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1999 |
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Conferința "International Semiconductor Conference" 22, Sinaia, Romania, 5-9 octombrie 1999 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1999.810534 | ||||||
| Pag. 347-349 | ||||||
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For the first time the heterojunctions (HJ) ZnTe-CdSe were grown by deposition of ZnTe layer on the glass substrate by the discrete evaporation method and CdSe-layer- by the guasiclosed volume method. Also for the first time the HJ CdSe-ZnTe was grown by quasiclosed volume method. Results of investigation of the photoelectric proprieties of these heterojunctions are presented. |
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| Cuvinte-cheie deposition, evaporation, glass, Photoelectricity, Semiconducting cadmium compounds, Semiconducting films, Semiconductor growth, Substrates, thin films, Zinc compounds |
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