Interface effects of strained semiconductor heterostructure in longitudinal magnetic field
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KANTSER, Valeriu, BEJENARI, Igor, ARAPAN, Sergiu. Interface effects of strained semiconductor heterostructure in longitudinal magnetic field. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 22, 5-9 octombrie 1999, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1999, Vol. 1, pp. 367-370. DOI: https://doi.org/10.1109/SMICND.1999.810539
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Proceedings of the International Semiconductor Conference
Vol. 1, 1999
Conferința "International Semiconductor Conference"
22, Sinaia, Romania, 5-9 octombrie 1999

Interface effects of strained semiconductor heterostructure in longitudinal magnetic field

DOI:https://doi.org/10.1109/SMICND.1999.810539

Pag. 367-370

Kantser Valeriu, Bejenari Igor, Arapan Sergiu
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 1 decembrie 2023


Rezumat

In the present work it is shown that the strained semiconductor structure in the magnetic field is an interesting object with unusual properties. The electron spectrum and some physical properties of the considered system have been studied. As well as the spin splitting of the interface states leading to peculiar effects of spin polarization, the spectrum asymmetry on the wave vector ky, E(-ky)≠E(ky) is an important property of the considered system.

Cuvinte-cheie
Electron spectroscopy, Interfaces (materials), Magnetic field effects, polarization, Semiconductor device structures