Spatial dispersion effects in the exciton-polariton reflectivity spectra of CuGaS2 crystals
Закрыть
Articolul precedent
Articolul urmator
85 0
SM ISO690:2012
SYRBU, Nicolae, URSACHI, Veaceslav, NYARI, Terezia, BLAZHE, M., PRUNIC, P., TEZLEVAN, Victor. Spatial dispersion effects in the exciton-polariton reflectivity spectra of CuGaS2 crystals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 23, 10-14 octombrie 2000, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2000, Vol. 1, pp. 101-104. DOI: https://doi.org/10.1109/SMICND.2000.890196
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Proceedings of the International Semiconductor Conference
Vol. 1, 2000
Conferința "International Semiconductor Conference"
23, Sinaia, Romania, 10-14 octombrie 2000

Spatial dispersion effects in the exciton-polariton reflectivity spectra of CuGaS2 crystals

DOI:https://doi.org/10.1109/SMICND.2000.890196

Pag. 101-104

Syrbu Nicolae, Ursachi Veaceslav, Nyari Terezia, Blazhe M., Prunic P., Tezlevan Victor
 
Technical University of Moldova
 
 
Disponibil în IBN: 29 noiembrie 2023


Rezumat

The analysis of the exciton reflectivity contour in CuGaS2 crystals at 8 K was carried out. Absorption and luminescence spectroscopy was employed for additional characterization. The value of the exciton Ridberg constant ℜ = 0.03247eV, the energy of the continuum Eg/n=∞ = 2.50305 eV and the thickness of the exciton-free layer L = 22 Å were deduced from this analysis. The excited n = 2 (2.53323 eV) and n = 3 (2.53774 eV) states of the excitons were determined. The upper polariton branch was drawn from the angular dependence of the reflectivity.

Cuvinte-cheie
Absorption spectroscopy, Continuum mechanics, Electron energy levels, Energy gap, Excitons, Luminescence, reflection, Semiconducting gallium compounds, Spectrum analysis