Photoluminescence study of α-ZnAl2S4 single crystals
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URSACHI, Veaceslav, BOLDURESCU, V., BURLAKOV, Igor, SYRBU, Nicolae, NYARI, Terezia. Photoluminescence study of α-ZnAl2S4 single crystals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 23, 10-14 octombrie 2000, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2000, Vol. 1, pp. 105-108. DOI: https://doi.org/10.1109/SMICND.2000.890197
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Proceedings of the International Semiconductor Conference
Vol. 1, 2000
Conferința "International Semiconductor Conference"
23, Sinaia, Romania, 10-14 octombrie 2000

Photoluminescence study of α-ZnAl2S4 single crystals

DOI:https://doi.org/10.1109/SMICND.2000.890197

Pag. 105-108

Ursachi Veaceslav, Boldurescu V., Burlakov Igor, Syrbu Nicolae, Nyari Terezia
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 29 noiembrie 2023


Rezumat

Photoluminescence (PL) spectra of ZnAl2S4 crystals with spinel structure were studied under the extrinsic excitation. The PL bands at 0.98 eV and 1.34 eV are suggested to be caused by native defects, while the bands at 1.61 eV and 2.0 eV are associated with the Cr and Mn impurities respectively. Mn2+ intracentral transitions were investigated by the PL excitation spectroscopy.

Cuvinte-cheie
Crystal growth, Crystal impurities, Electron energy levels, Energy gap, photoluminescence, Semiconducting zinc compounds, Spectrum analysis, ultraviolet spectroscopy