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 SM ISO690:2012TSIULYANU , Dumitru, STRATAN, Ion, TSIULYANU, A., EISELE, Ignatz. Sensing properties of tellurium based thin films to oxygen, nitrogen and water vapour. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 29, 27-29 septembrie 2006, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2006, Vol. 2, Ediția 29, pp. 287-290. ISBN 1424401097, 978-142440109-3. DOI: https://doi.org/10.1109/SMICND.2006.283999 |
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 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 29, 2006 |
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Conferința "29th International Semiconductor Conference" 29, Sinaia, Romania, 27-29 septembrie 2006 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2006.283999 | ||||||
| Pag. 287-290 | ||||||
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Effect of O2, N2 and H2O to electrical behaviour of tellurium-based films has been studied at temperatures between 20 °C and 70 °C. The increase of oxygen partial pressure in N2 + O2 carrier gas results in a nearly linear decreasing of the film resistance. The complete impulsive substitution of nitrogen by oxygen decreases the resistance of the film with ∼ 6 % in 1.5 hours. The effect of humidity is more perceptible. At room temperature the resistance of the films increase with 15 % at 58 %RH, but humidity has a negligible effect at temperatures higher than 50 °C. The results suggest that effect of water vapour is due to simple physical adsorption, whereas effect of oxygen and nitrogen is the consequence of "week" chemisorption of these molecules on the film surface. |
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| Cuvinte-cheie Atmospheric humidity, Electric properties, Nitrogen, oxygen, Tellurium, Thermal effects, Water vapor |
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