Sensing properties of tellurium based thin films to oxygen, nitrogen and water vapour

Tsiulyanu  Dumitru; Stratan Ion; Tsiulyanu A.; Eisele Ignatz

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TSIULYANU , Dumitru, STRATAN, Ion, TSIULYANU, A., EISELE, Ignatz. Sensing properties of tellurium based thin films to oxygen, nitrogen and water vapour. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 29, 27-29 septembrie 2006, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2006, Vol. 2, Ediția 29, pp. 287-290. ISBN 1424401097, 978-142440109-3. DOI: https://doi.org/10.1109/SMICND.2006.283999

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Proceedings of the International Semiconductor Conference
Vol. 2, Ediția 29, 2006

Conferința "29th International Semiconductor Conference"
29, Sinaia, Romania, 27-29 septembrie 2006

Sensing properties of tellurium based thin films to oxygen, nitrogen and water vapour

DOI:https://doi.org/10.1109/SMICND.2006.283999

Pag. 287-290

Tsiulyanu Dumitru¹, Stratan Ion¹, Tsiulyanu A.¹, Eisele Ignatz²

¹ Technical University of Moldova,
² The Bundeswehr University Munich

Disponibil în IBN: 24 noiembrie 2023

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Effect of O₂, N₂ and H₂O to electrical behaviour of tellurium-based films has been studied at temperatures between 20 °C and 70 °C. The increase of oxygen partial pressure in N₂ + O₂ carrier gas results in a nearly linear decreasing of the film resistance. The complete impulsive substitution of nitrogen by oxygen decreases the resistance of the film with ∼ 6 % in 1.5 hours. The effect of humidity is more perceptible. At room temperature the resistance of the films increase with 15 % at 58 %RH, but humidity has a negligible effect at temperatures higher than 50 °C. The results suggest that effect of water vapour is due to simple physical adsorption, whereas effect of oxygen and nitrogen is the consequence of "week" chemisorption of these molecules on the film surface.

Cuvinte-cheie
Atmospheric humidity, Electric properties, Nitrogen, oxygen, Tellurium, Thermal effects, Water vapor

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