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 SM ISO690:2012SHISHIYANU, Sergiu, SHISHIYANU, Teodor, LUPAN, Oleg. Microtechnology with silar and RPP for semiconductor oxide gas sensors. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 36, 3-5 octombrie 2005, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2005, Vol. 1, Ediția 28, pp. 205-208. ISBN 0780392140, 978-078039214-4. DOI: https://doi.org/10.1109/SMICND.2005.1558748 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 28, 2005 |
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Conferința "28th International Semiconductor Conference" 36, Sinaia, Romania, 3-5 octombrie 2005 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2005.1558748 | ||||||
| Pag. 205-208 | ||||||
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Microtechnology with Successive Ionic Layer Adsorption and Reaction (SILAR) technique and Rapid Photothermal Processing (RPP) was elaborated and applied for semiconductor oxides gas sensors. The experimental results shown that by RPP is possible to control the surface morphology, photoluminescence, sensing properties and operating temperature of impurity doped zinc oxide thin films. The highest sensitivity to 1.5 ppm NO2 was obtained for 5 - 10 at. % Sn concentration in the solution of ions and RPP temperature of 550 - 650°C. |
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| Cuvinte-cheie adsorption, Ions, microelectronics, photoluminescence, Reaction kinetics, Semiconducting zinc compounds, Semiconductor doping, thin films |
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