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 SM ISO690:2012VASILIEV, Ion, YOVU, M., MIROVITSKII, Vadim, KOLOMEYKO, Eduard, HAREA, Diana. Photocapacitance relaxation in amorphous As2Se3 and As2Se3: Sn films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 36, 3-5 octombrie 2005, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2005, Vol. 1, Ediția 28, pp. 133-136. ISBN 0780392140, 978-078039214-4. DOI: https://doi.org/10.1109/SMICND.2005.1558729 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 28, 2005 |
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Conferința "28th International Semiconductor Conference" 36, Sinaia, Romania, 3-5 octombrie 2005 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2005.1558729 | ||||||
| Pag. 133-136 | ||||||
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Measurements are presented for the photocapacitance transient arising at contacts of the metal - amorphous As2Se3 or As 2Se3: Snx (x∼1 at. %) film as response to a pulse of linearly increasing voltage. It was shown, that transient photocapacitance is determined by the deep acceptor-like states, which are quasi-continuously distributed near the Fermi-level. The observed increasing in concentration of deep states in samples with tin impurity was discussed. |
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| Cuvinte-cheie Amorphous materials, Arsenic compounds, Concentration (process), Crystal impurities, Electric potential, Quasicrystals, Relaxation processes |
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