Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
69 0 |
SM ISO690:2012 YOVU, M., SYRBU, Nicolae, SHUTOV, Serghei, VASILIEV, Ion, REBEJA, S., KOLOMEYKO, Eduard, POPESCU, Mihai A., SAVA, Florinel. Spectroscopical study of amorphous AsSe:Sn films. In: Physica Status Solidi (A) Applied Research, 1999, vol. 175, pp. 615-622. ISSN 0031-8965. DOI: https://doi.org/10.1002/(SICI)1521-396X(199910)175:2<615::AID-PSSA615>3.0.CO;2-N |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Physica Status Solidi (A) Applied Research | ||||||
Volumul 175 / 1999 / ISSN 0031-8965 /ISSNe 1521-396X | ||||||
|
||||||
DOI:https://doi.org/10.1002/(SICI)1521-396X(199910)175:2<615::AID-PSSA615>3.0.CO;2-N | ||||||
Pag. 615-622 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
The effect of tin impurities on optical spectra of thermally deposited AsSe films doped with Sn (1 to 10 at%) was studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. Most changes have been detected at the fundamental absorption edge over which a correlation between the band tail width and optical gap is demonstrated for various tin concentrations. The tin induced absorption band associated with a localized energy level at about 1.6 eV in the gap was revealed. Distinct variations in the reflectivity spectra of the fundamental absorption region suggest a tin assistance in the formation of the valence band states of the material. |
||||||
Cuvinte-cheie Absorption spectroscopy, Amorphous films, Composition effects, Energy gap, Impurities, Light absorption, Light reflection, Semiconducting selenium compounds, tin |
||||||
|