Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
146 0 |
SM ISO690:2012 CROITORU, Mihail, GLADILIN, Vladimir, FOMIN, Vladimir, DEVREESE, Josef T., MAGNUS, Wim, SCHOENMAKER, Wim J., SOREE, Bart. Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics. In: Solid State Communications, 2008, vol. 147, pp. 31-35. ISSN 0038-1098. DOI: https://doi.org/10.1016/j.ssc.2008.04.025 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Solid State Communications | ||||||
Volumul 147 / 2008 / ISSN 0038-1098 /ISSNe 1879-2766 | ||||||
|
||||||
DOI:https://doi.org/10.1016/j.ssc.2008.04.025 | ||||||
Pag. 31-35 | ||||||
|
||||||
Rezumat | ||||||
Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I-V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device. |
||||||
Cuvinte-cheie A. Nanostructures, D. Electronic transport |
||||||
|
Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Croitoru, M.D.</dc:creator> <dc:creator>Gladilin, V.N.</dc:creator> <dc:creator>Fomin, V.M.</dc:creator> <dc:creator>Devreese, J.</dc:creator> <dc:creator>Magnus, W.</dc:creator> <dc:creator>Schoenmaker, W.</dc:creator> <dc:creator>Soree, B.</dc:creator> <dc:date>2008-07-01</dc:date> <dc:description xml:lang='en'><p>Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO<sub>2</sub> interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I-V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.</p></dc:description> <dc:identifier>10.1016/j.ssc.2008.04.025</dc:identifier> <dc:source>Solid State Communications () 31-35</dc:source> <dc:subject>A. Nanostructures</dc:subject> <dc:subject>D. Electronic transport</dc:subject> <dc:title>Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>