<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<identifier identifierType='DOI'>10.1063/1.1829146</identifier>
<creators>
<creator>
<creatorName>Anikin, V.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Jurmînschi, I.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Kinetics of image formation in the equipotential semiconductor- thermoplastic system</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2005</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0021-8979</relatedIdentifier>
<subjects>
<subject>Engineering controlled terms
Current voltage characteristics</subject>
<subject>deformation</subject>
<subject>Electric corona</subject>
<subject>Electrostatics</subject>
<subject>Holographic interferometry</subject>
<subject>Image quality</subject>
<subject>photosensitivity</subject>
<subject>Semiconductor materials</subject>
<subject>Thermoplastics</subject>
<subject>Viscoelasticity
Engineering uncontrolled terms
Electrostatic contrast</subject>
<subject>Photothermoplastic medium (PTPM)</subject>
<subject>Semiconductor-thermoplastic systems
Engineering main heading
Multilayers</subject>
</subjects>
<dates>
<date dateType='Issued'>2005-01-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>The redistribution of corona current in regions with a low potential has been experimentally shown. This led to the equipotentiality of the semiconductor-thermoplastic system at charging in the field of corona discharge. The self-coordinated model of kinetics formation of electrostatic contrast in a corona discharge is proposed. The model takes into consideration a nonlinearity of current-voltage characteristics of the semiconductor, and thermoplastic and deformation of the thermoplastic layer. The moment of deformation appearance is set at random from experimental data. &copy; 2005 American Institute of Physics.</p></description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>