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Articolul urmator |
87 0 |
SM ISO690:2012 COJOCARU, Ala, CARSTENSEN, Juergen, LEISNER, Malte, FOLL, Helmut, TIGINYANU, Ion. Self-induced oscillation of the macropore diameter in n-type silicon. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2009, vol. 6, pp. 1533-1535. ISSN 1862-6351. DOI: https://doi.org/10.1002/pssc.200881030 |
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Physica Status Solidi (C) Current Topics in Solid State Physics | ||||||
Volumul 6 / 2009 / ISSN 1862-6351 /ISSNe 1610-1642 | ||||||
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DOI:https://doi.org/10.1002/pssc.200881030 | ||||||
Pag. 1533-1535 | ||||||
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Electrochemical etching of n-type silicon in viscous-electrolyte containing HF for macropore formation has been employed to obtain deep pores at high growth rates. Under certain conditions, a new kind of macropore growth has been observed. The macropore diameters show self-induced antiphase oscillations during specific phases of pore growth. This remarkable structural feature is not only interesting by itself, it is also the manifestation of a steady state of pore growth, a feature which has not been observed in any kind of electro-chemically grown pores in semiconductors so far. This conclusion is mainly based on in-situ FFT (Fast Fourier Transform) voltage and illumination impedance spectroscopy measurements performed during the pore etching. Some voltage impedance data are presented here. Image Presented. |
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Cuvinte-cheie Antiphase oscillations, FFT (fast Fourier transform), High growth rate, Impedance data, Impedance spectroscopy measurements, In-situ, Macro pores, Macropore formation, N type silicon, Pore growth, Self-induced oscillations, Steady state, Structural feature |
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