Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
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BOTNARYUK, V., ZHILYAEV, Yurii, RUD, Yu., RUD, V.. Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures. In: Semiconductors, 1999, vol. 33, pp. 412-415. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187705
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Semiconductors
Volumul 33 / 1999 / ISSN 1063-7826

Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

DOI:https://doi.org/10.1134/1.1187705

Pag. 412-415

Botnaryuk V.1, Zhilyaev Yurii2, Rud Yu.2, Rud V.3
 
1 Moldova State University,
2 Ioffe Physical-Technical Institute, RAS,
3 State Educational Institution St. Petersburg State Polytechnical University
 
 
Disponibil în IBN: 16 octombrie 2023


Rezumat

The fabrication of photosensitive In(Au)/Si barrier-contact structures is described and the photoelectric behavior of these structures upon exposure to linearly polarized light incident obliquely on the barrier-contact side is investigated. Oscillations are observed in the spectral dependences of the photoconversion quantum efficiency and induced photopleochroism. The oscillations are explained by interference of the linearly polarized light in the thin silicon films.

Cuvinte-cheie
photosensitivity, Polarized Radiation, photodetectors