The detection of radiation in the ultraviolet C (UVC) region (100-280 nm) is of great importance for numerous technical applications, such as fire detection in security devices, tracking astronomical missile trajectories, chemical-biological analyses, and medicinal applications. Wide bandgap semiconductors have emerged as ideal materials for electronic devices operating in this spectral range. Among the various promising materials, β-Ga2O3, a gallium oxide with a monoclinic crystal lattice, has garnered significant attention along with AlxGa1-xN, AlN, and BN. While thin layers of AlxGa1-xN suffer from structural instability, AlN exhibits photosensitivity to radiation with wavelengths shorter than 215 nm. On the other hand, cubic BN possesses an absorption band fundamental in the UV-vacuum region (λ≤195 nm). Notably, β-Ga2O3, with its direct n-type energy bands and a bandgap of 4.5-4.9 eV, demonstrates high photosensitivity in the UVC range, making it an excellent material for photoreceptors in the 220-280 nm range. In this study, we investigate the elemental chemical composition, absorption band edge, vibrational and photoresponsive properties of β-Ga2O3 nano-wire/nano-ribbon assemblies on a substrate of monocrystalline lamellae from GaSxSe1-x solid solutions (x=0.17). The nano-wire assemblies were grown using thermal oxidation of gallium compound semiconductors at temperatures ranging from 750 to 950 ℃ in an oxygen or water vapor-enriched atmosphere. Our findings provide valuable insights into the potential of β-Ga2O3 nanostructures as efficient photoreceptors for UVC radiation detection.