Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
217 0 |
SM ISO690:2012 POKATILOV, Evghenii, NIKA, Denis, BALANDIN, Alexander A.. Built-in field effect on the electron mobility in AlN/GaN/AlN quantum wells. In: Applied Physics Letters, 2006, vol. 89, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.2349835 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Applied Physics Letters | ||||||
Volumul 89 / 2006 / ISSN 0003-6951 /ISSNe 1077-3118 | ||||||
|
||||||
DOI:https://doi.org/10.1063/1.2349835 | ||||||
Pag. 0-0 | ||||||
|
||||||
Rezumat | ||||||
The authors demonstrated theoretically that compensation of the built-in electric field in AlN/GaN/AlN heterostructures with the externally applied perpendicular electric field may lead to the increase of the in-plane electron drift mobility. It has been shown that two- to fourfold increase of the room temperature mobility can be achieved for both nondegenerate and degenerate electron densities. Their calculations clarified the role of the intersubband electron transitions mediated by optical phonons in limiting the carrier mobility in GaN-based heterostructures. The tuning of the electron mobility with the perpendicular electric field may impact design of the high-power GaN/AlGaN heterostructure field-effect transistors. |
||||||
Cuvinte-cheie Carrier concentration, Electric field effects, Electric fields, Electron mobility, Electron transitions, Gallium nitride, Heterojunctions, phonons, Thermal effects, Tuning |
||||||
|
Cerif XML Export
<?xml version='1.0' encoding='utf-8'?> <CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'> <cfResPubl> <cfResPublId>ibn-ResPubl-182991</cfResPublId> <cfResPublDate>2006-09-11</cfResPublDate> <cfISSN>0003-6951</cfISSN> <cfURI>https://ibn.idsi.md/ro/vizualizare_articol/182991</cfURI> <cfTitle cfLangCode='EN' cfTrans='o'>Built-in field effect on the electron mobility in AlN/GaN/AlN quantum wells</cfTitle> <cfKeyw cfLangCode='EN' cfTrans='o'>Carrier concentration; Electric field effects; Electric fields; Electron mobility; Electron transitions; Gallium nitride; Heterojunctions; phonons; Thermal effects; Tuning</cfKeyw> <cfAbstr cfLangCode='EN' cfTrans='o'><p>The authors demonstrated theoretically that compensation of the built-in electric field in AlN/GaN/AlN heterostructures with the externally applied perpendicular electric field may lead to the increase of the in-plane electron drift mobility. It has been shown that two- to fourfold increase of the room temperature mobility can be achieved for both nondegenerate and degenerate electron densities. Their calculations clarified the role of the intersubband electron transitions mediated by optical phonons in limiting the carrier mobility in GaN-based heterostructures. The tuning of the electron mobility with the perpendicular electric field may impact design of the high-power GaN/AlGaN heterostructure field-effect transistors. </p></cfAbstr> <cfResPubl_Class> <cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId> <cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> </cfResPubl_Class> <cfResPubl_Class> <cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId> <cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> </cfResPubl_Class> <cfPers_ResPubl> <cfPersId>ibn-person-371</cfPersId> <cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId> <cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> </cfPers_ResPubl> <cfPers_ResPubl> <cfPersId>ibn-person-1049</cfPersId> <cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId> <cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> </cfPers_ResPubl> <cfPers_ResPubl> <cfPersId>ibn-person-54424</cfPersId> <cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId> <cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> </cfPers_ResPubl> <cfFedId> <cfFedIdId>ibn-doi-182991</cfFedIdId> <cfFedId>10.1063/1.2349835</cfFedId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> <cfFedId_Class> <cfClassId>31d222b4-11e0-434b-b5ae-088119c51189</cfClassId> <cfClassSchemeId>bccb3266-689d-4740-a039-c96594b4d916</cfClassSchemeId> </cfFedId_Class> <cfFedId_Srv> <cfSrvId>5123451</cfSrvId> <cfClassId>eda2b2e2-34c5-11e1-b86c-0800200c9a66</cfClassId> <cfClassSchemeId>5a270628-f593-4ff4-a44a-95660c76e182</cfClassSchemeId> </cfFedId_Srv> </cfFedId> </cfResPubl> <cfPers> <cfPersId>ibn-Pers-371</cfPersId> <cfPersName_Pers> <cfPersNameId>ibn-PersName-371-3</cfPersNameId> <cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId> <cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> <cfFamilyNames>Pokatilov</cfFamilyNames> <cfFirstNames>Evghenii</cfFirstNames> <cfFamilyNames>Покатилов</cfFamilyNames> <cfFirstNames>Евгений</cfFirstNames> </cfPersName_Pers> </cfPers> <cfPers> <cfPersId>ibn-Pers-1049</cfPersId> <cfPersName_Pers> <cfPersNameId>ibn-PersName-1049-3</cfPersNameId> <cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId> <cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> <cfFamilyNames>Nika</cfFamilyNames> <cfFirstNames>Denis</cfFirstNames> <cfFamilyNames>Ника</cfFamilyNames> <cfFirstNames>Денис</cfFirstNames> </cfPersName_Pers> </cfPers> <cfPers> <cfPersId>ibn-Pers-54424</cfPersId> <cfPersName_Pers> <cfPersNameId>ibn-PersName-54424-3</cfPersNameId> <cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId> <cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId> <cfStartDate>2006-09-11T24:00:00</cfStartDate> <cfFamilyNames>Balandin</cfFamilyNames> <cfFirstNames>Alexander A.</cfFirstNames> </cfPersName_Pers> </cfPers> <cfSrv> <cfSrvId>5123451</cfSrvId> <cfName cfLangCode='en' cfTrans='o'>CrossRef DOI prefix service</cfName> <cfDescr cfLangCode='en' cfTrans='o'>The service of issuing DOI prefixes to publishers</cfDescr> <cfKeyw cfLangCode='en' cfTrans='o'>persistent identifier; Digital Object Identifier</cfKeyw> </cfSrv> </CERIF>